Samsung has announced that it has developed the first 8 Gb (gigabit), low power double data rate 4 (LPDDR4) mobile DRAM built on 20nm manufacturing process and bringing 1GB on a single die. Aimed at UHD smartphones, tablets and ultra-slim notebooks, the new 8Gb LPDDR4 will provide a decent performance boost when compared to currently available 20nm-class LPDDR3 DRAM.

The new 8Gb LPDDR4 is actually the largest density available for DRAM components today and with four of those chips you can have a single 4GB LPDDR4 package. Using Samsung's Low Voltage Swing Terminated Logic (LVSTL) I/O interface, Samsung will enable a data transfer rate per pin of 3,2000 Mbps, which is actually twice of the 20nm-class LPDDR3 DRAM which is currently mass produced. According to Samsung, the new LPDDR4 interface will provide 50 percent higher overall performance than the fastest LPDDR3 or DDR3 memory while consuming 40 percent less energy at 1.1V.

The new 8Gb LPDDR4 is aimed at large screen UHD smartphones, tablets and even ultra-slim notebooks as well as high-performance network systems. Earlier in November, Samsung has starter to offer its thinnest and smallest 3GB LPDDR3 (6Gb) package memory while the new 8Gb LPDDR4 is expected sometime in 2014.



Source: SamsungTomorrow.com.