32GB on a TLC NAND chip
Toshiba has announced the new generation BiCS flash memory, a 3D stacked cell structure flash memory featuring 256Gb 48-layer NAND based on 3D TLC technology.
According to Toshiba, the new BiCS Flash is based on a new 48-layer stacking process that enhances the capacity of currently available 2D NAND flash memory while enhancing write/erase reliability endurance and boost write performance. The new 256Gb (32GB) chip will be suited for diverse applications including consumer SSDs, smartphones, tablets, memory cards and enterprise SSDs.
The new 256Gb 48-layer BiCS Flash 3D TLC NAND chip is currently readying for mass production in a new Fab2 which is expected to be completed in the first half of the next year while sample shipments of the new chip are expected in September 2015.
Source: Toshiba.com.
According to Toshiba, the new BiCS Flash is based on a new 48-layer stacking process that enhances the capacity of currently available 2D NAND flash memory while enhancing write/erase reliability endurance and boost write performance. The new 256Gb (32GB) chip will be suited for diverse applications including consumer SSDs, smartphones, tablets, memory cards and enterprise SSDs.
The new 256Gb 48-layer BiCS Flash 3D TLC NAND chip is currently readying for mass production in a new Fab2 which is expected to be completed in the first half of the next year while sample shipments of the new chip are expected in September 2015.
Source: Toshiba.com.
News by Luca Rocchi and Marc Büchel - German Translation by Paul Görnhardt - Italian Translation by Francesco Daghini
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