Samsung Electronics has announced a start of mass production of 8Gb (Gigabit) DDR4 memory and 32GB modules, both manufactured on a new 20nm manufacturing process and aimed to be used in enterprise servers.


With the mass production of 8Gb DDR4, Samsung can now offer a full lineup of 20nm-based DRAM, which has previously included 20nm 4Gb DDR3 as well as 20nm 6Gb LPDDR3 for mobile devices. The mass production of 20nm 8Gb DDR4 DRAM chips, Samsung is now able to produce 32GB registered dual in-line memory module (RDIMM) which has a transfer rate per pin of up to 2400Mbps, or 29 percent performance increase compared to current 1866Mbps DDR3 server modules.

The introduction of 8Gb DDR4 memory chips also allows Samsung to produce server modules with a maximum capacity of 128GB by using 3D TSV (through silicon via) technology. The new high density DDR4 also has improved error correction features, which are quite important in the enterprise market and use 1.2V voltage, which is currently the lowest possible voltage.




"Our new 20 nm 8 Gb DDR4 DRAM more than meets the high performance, high density and energy efficiency needs that are driving the proliferation of next-generation enterprise servers," said Jeeho Baek, Vice President of Memory Marketing at Samsung Electronics. "By expanding the production of our 20 nm DRAM line-ups, we will provide premium, high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market."






Source: Samsung.com.