Samsung has announced that it has started the mass production of industry's first 64GB DDR4 registered dual inline memory modules (RDIMM) with three dimensional (3D) "through silicon via" (TSV) package technology for enterprise servers, cloud-based applications and data center solutions.


The new RDIMM feature 36 DDR4 DRAM chips, each with four 4Gb DDR4 DRAM dies. As noted, these low power-chips are manufactured using Samsung's 20nm class process technology and 3D TSV package technology. With the use of 3D TSV DRAM package, the new 64GB TSV modules perform twice as fast as a 64GB module that uses standard wire bonding packaging while using half the power.

Samsung also noted that in future the company believes that it will be able to stack more than four DDR4 dies using 3D TSV technology which will lead to higher density DRAM modules.

"Samsung is reinforcing its competitive edge in the DRAM market with its new state-of-the-art solution using its 3D TSV technology, while driving growth in the global DRAM market," said Jeeho Baek, vice president, memory marketing, Samsung Electronics. "By introducing highly energy-efficient DDR4 modules assembled with 3D TSV, we're taking a big step ahead of the mainstream DDR4 market, which should dramatically expand with the expected introduction of next-generation CPUs in the second half of this year."

According to a report from Gartner, global DRAM market is expected to reach US $38.6 billion and 29.8 billion units by the end of this year, while memory server market will account for more than 20 percent of all DRAM production.



Source: Samsung.com.