Samsung Electronics has announced that it has accelerated its production ramp up of DDR4 memory modules for anticipated strong market demand for the approaching introduction of the new Intel Xeon E5-2600 v3 product family.


According to the company, the production DDR4 modules are based on 4Gb DDR4 chips working at effective clock-rates of 2133Mb/s and 2400Mb/s and made at 20nm manufacturing process. The lineup includes DDR4 RDIMMs, LRDIMMs, and ECC SODIMMs, as well as x4, x8 and x16 DDR4 chips. Samsung also noted that its transition to 8Gb 32GB DDR4 modules aimed for high-density server market is expected later this year.

"At Samsung, we are taking the lead in readying the DDR4 market to coincide with the introduction of the next-generation Intel Xeon processor E5-2600 v3 product family, and plan to contribute to creating a bigger market for DRAM in the second half of 2014," said Jim Elliott, corporate vice president, Memory Marketing, Samsung Semiconductor, Inc. "We will continue to introduce high-density DDR4 modules for global OEMs that will facilitate the launch of next-generation enterprise servers and will maximize IT investment efficiency."

According to Samsung, its DDR4 modules are available globally in densities from 8 to 64GB and at frequencies ranging from 2133Mb/s to 2400Mb/s.



Source: Samsung.com.