Samsung has announced mass production of its new 256GB embedded flash based on UFS 2.0 standard and Samsung's own 3D V-NAND, which is aimed at high-end mobile devices.

As most smartphone and mobile manufacturers are moving to UFS 2.0 standard, Samsung has now announced that it has started the mass production of its new 256GB UFS 2.0 embedded flash chip which will be based on the 3D V-NAND flash memory.

With 3D V-NAND, Samsung managed to raise the capacity from standard 128GB to 256GB as well as provide much better performance. The sequential speed is set at up to 850MB/s while random read and write performance reaches 45k and 40k IOPS. These performance figures are quite higher than what we have seen in flagship smartphones earlier so hopefully the next generation will be quite impressive.

With such performance, the new 256GB UFS 2.0 flash memory from Samsung is capable of supporting Ultra HD video playback and multi-tasking functionality on mobile devices. For example, Samsung noted that you can store around 47 full HD movies on a single 256GB UFS chip.

Thanks to the new advance memory technology, the new UFS chips are also compact, giving a lot more room to smartphone designers.

Samsung also plans to extend its premium lineup based on 3D V-NAND flash memory and it is just a matter of time before we see smartphones with Samsung's new 256GB UFS 2.0 chips for internal storage.



Source: Samsung.com.