Samsung teases post-DDR4 memory at 6.4GHz

To be ready by 2020

While DDR4 is already shattering frequency records on Intel's new Z170 chipset, Samsung is already looking ahead and planing 32GB modules that will be running on 6.4GHz and be ready by 2020.

During IDF 2015 show, Samsung has unveiled some details regarding the future of memory and it appears that we will be looking at memory running at incredible 6.4GHz, providing up to a rather staggering 51.2GB/s of bandwidth. The capacity will also increase from 4Gb or 8Gb, that we are seeing today, to up to 32Gb. This, so called, post-DDR4 DRAM will be made on sub-10nm manufacturing process and will probably use 2.5D or 3D packaging.

According to Samsung, ultra-portable devices will stick to LPDDR4-like memory technologies while bandwidth-demanding applications such as graphics cards will rely on High-Bandwidth Memory (HBM).

Samsung plans to have prototypes ready by 2018 while the new post-DDR4 memory could be ready for market by 2020.







Source: Computerbase.de.




News by Luca Rocchi and Marc Büchel - German Translation by Paul Görnhardt - Italian Translation by Francesco Daghini


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