During its keynote event at the Flash Memory Summit 2013 held in Santa Clara, California, Samsung has unveiled its new and world's first enterprise solid state drive based on 3D V-NAND technology. Designed for usage in enterprise server and data center scenarios, the new V-NAND SSD will offer significant increase in sequential and random write speeds and impressive manufacturing improvements.

The new V-NAND SSD unveiled by Samsung will be available in two versions, as a 960GB and 480GB model. Although it still did not shed any performance numbers it did note that we can expect up to 20 percent improvement in performance and an over 40 percent improvement in power consumption. The best part of the story is that Samsung's 3D V-NAND technology overcomes the complications of scaling beyond the 10-nanometer class.

The V-NAND SSD 960GB model will have the highest level of performance by offering more than 20 percent increase in sequential and random write speeds by using 64 dies of MLC 3D V-NAND flash chips, each offer 128Gb (gigabits) of storage and 6Gbps SATA interface controller. According to Samsung, the new V-NAND SSD will offer 35K program erase cycles and will be available in 2.5-inch 7mm form factor.

According to Samsung, the new 3D V-NAND technology brings manufacturing productivity improvements that are over twice that of 20nm-class planar NAND flash, by using "cylinder-shaped 3D Charge Trap Flash cell structures and vertical interconnect process technology to link the 24 layers comprising the 3D cell array". Samsung puts a lot of confidence in the new 3D V-NAND technology comparing it to a "Digital Big Bang" in the global IT industry.

Samsung noted that it has began producing the new V-NAND SSDs earlier this month and that it will continoue to introduce next-generation V-NAND products with enhanced performance to meet diverse customer needs for NAND flash-based storage so we could probably look forward to consumer based version.



Source: Samsung.com.