While it has previously already announced that it is working on 3D V-NAND TLC (three bits per cell) flash memory, Samsung kept the big announcement for the Flash Memory Summit held this week, where it has revealed some details regarding the upcoming TLC 3D V-NAND.


According to the slides spotted by PC Perspective, the TLC 3D V-NAND has the same 32-layer structure as the MLC V-NAND which is the key part of the recently released Samsung 850 Pro SSD, but with an extra bit per cell. While those same slides do not reveal any precise details regarding the density, performance and importantly, endurance, it does reveal some details regarding latency, multi-stream storage intelligence, and theoretical double density.

According to PC Perspective, the new TLC V-NAND will be the key part of the upcoming Samsung 850 EVO, which should have similar performance to the 850 Pro but with reduced price, similar to the 840 EVO.




We are certainly looking forward to Samsung's implementation of the new TLC 3D V-NAND and we will hopefully have a chance to try out our endurance and performance benchmarks on one of it quite soon.

Source: PC Perspective.