Conclusion
Announcement:
Despite the circumstance that the rating of a product is based on as many
objective facts as possible there are factors which can have an influence on a
rating after publication. Every autor may perceive data differently over time
whereas one possible reason for example is a deeper background knowledge or
understanding of certain processes. Certain unforseen market conditions as well
as changes have the potential to render a descision made at a certain point in
time obsolete.
With the 845DC Series Samsung Electronics have launched their first enterprise
grade SSD. Samsung Semiconductor on the other hand is active in that area since
a long time, generating know-how that can now be found in the latest drives
launched by Samsung Electronics. The most impressive new feature available on
the 845DC PRO is undoubtedly the 3D V-NAND Flash memory. Thanks to its
cylindrical structure two pressing issues with NAND Flash memory could be
addressed at the same time, since the new memory cells use 40nm process
technology, accounting for significantly higher endurance, combined with
stackability which allows for Die density of up to 128Gbit. This result was
achieved by using 24 layers. Samsung is already working on 48 layer as well as
96 layer 3D V-NAND Flash memory. This would then enable NAND Flash dies with
1Tbit density.
In terms of raw performance our test drive was able to score 500 MB/s sequential
write and 544 MB/s sequential read throughput. When it comes to 4K
IOPS we measured 92'100 IOPS regarding random read and 85'800 regarding random
write. In case of sequential write the drive could be a little bit quicker.
Regarding random read we see that the SATA-III inferfce is being maxed out with
and therefore performance is where it should be. When it comes to random read
IOPS performance we measured almost point blank the same Samsung is advertising.
On the other hand, when it comes to random write performance we were in for
quite a surprise, since Samsung claims this drive can "only" do 51'000 IOPS 4k
random write. We measured a whopping 34'800 IOPS more. On another note we also
had a look at performance with different queue depths as you can see on page 10.
In case of random read performance we see 7'500 IOPS (1'000 less than
communicated by Samsung) and when it comes to random write we see 37'750 IOPS
(twice as much as communicated by Samsung).
The single most important aspect in case of an enterprise-grade SSD is endurance
and this is where the 3D V-NAND Flash memory can show off. Samsung promises up
to 10 Drive Writes Per Day for five years, which translates into 14'600 TBW.
This is an exceptional value and we are going to run an endurance test on this
drive ourselves to see if we can confirm this result.
Last but not least there is the pricing. The Samsung 845DC PRO 400GB comes with
an MSRP of 959.99 US-Dollar whereas the samsung 845DC PRO 800GB is recommended
to sell for 1'829.99 US-Dollar. Price per gigabyte is therefore somewhere
inbetween 2.40 and 2.29 US-Dollar, which is actually in-line with competitors
offers.
Should you be looking for an enterprise-grade SSD, which can easily deal with
write intense workloads, then we highly recommend considering this drive.
Authors: m.buechel@ocaholic.ch