Samsung has announced the mass production of industry's first Through Silicon Via (TSV) 128GB DDR4 RDIMM modules aimed at enterprise and data center application.

While Samsung was already first with 3D TSV 64GB DDR4 DRAM modules in 2014, the company has now reached a new breakthrough in DDR4 RAM, announcing the first TSV registered dual inline memory module (RDIMM) which will be available in 128GB capacity.

Featuring a total of 144 DDR4 chips arranged into 36 4GB DRAM packages, each based on four 20nm 8Gb chips, the 128GB TSV DDR4 RDIMM module uses the new TSV packaging, where the chip dies are slimmed down to a few dozen micrometers and vertically connected with electordes passing through hundreds of fine holes, allowing a significant boost in signal transmission. The new 128GB TSV DDR4 RDIMM module also has a special design through which the master chip of each 4GB package embeds the data buffer function in order to optimize peformance and power consumption.

This allowed Samsung to provide a low-power solution for next-generation servers reaching speeds of up to 2,400 Mbps and achieving nearly twice the performance at up to 50 percent lower power consumption, compared to the previously available 64GB LRDIMMs.

Samsung also noted that it plans to accelerate the production of TSV technology due to a growing demand for such ultra-high capacity DRAM and should expand its lineup with a new high-performance TSV DRAM modules in the next few weeks, including 128GB load reduced DIMMs (LRDIMMs) as well as TSV modules with higher performance, reaching 2,667Mbps and 3,200Mbps.



Source: Samsung.com.