Samsung has announced that it has started industry's first production of "ultra-high-speed" 4Gb low power double data rate 3 (LPDDR3) mobile DRAM by using 20nm-class process node.
According to Samsung, the new mobile DRAM now enables OEMs to introduce even more innovative designs and deliver high-performance, high-density memory to the market. The new 4Gb LPDDR3 can achieve transfer speeds of up to 2,133 megabits per second that is currently more than double the performance of current LPDDR2 chips that can go up to 800Mbps.

When compared to previously available 30nm-class LPDDR3 DRAM, the new one will bring more than a 30 percent improvement in performance and 20 percent saving in power consumption. Furthermore, since mobile gadgets continue to become more and more thinner, the new 4Gb LPDDR3 mobile DRAM provides OEMs with a possibility to gave a 2GB package that includes four of Samsung's new chips in a single package, all at package height of 0.8mm.

Samsung also plans to increase the production of its advanced 20nm-class mobile DRAM later this year.

Source: Samsung.com.