Samsung is the first company ready to produce GDDR6 memory chips on large scale. The company has beaten SK Hynix and Micron, the other two big memory manufacturers. Samsung's 16Gb (2GB) chips are fabricated on a 10nm process and run at 1.35V.


The upcoming chips will sport a whopping 18Gb/s pin speed and will reach a transfer rate of 72GB/s. At the moment, Samsung's current 8Gb (1GB) GDDR5 memory chips work at 1.55V with up to 9Gb/s pin speeds. Furthermore the upcoming chips will come with more density. A few weeks ago, Samsung mentioned the release of these chips. However, the speed on release note is way faster than the earlier stated.

Regarding the competition, SK Hynix released details of its GDDR6 chips about six months ago, while Micron said its chips were on track for mass production this year. The first chip from SK Hynix should be 8Gb with 16Gb/s pin speed and a voltage of 1.35V. The 16Gb version is planned on later stage. Micron never detailed a specific chip but the first chip should start at 12Gb/s, that is the same speed that we can find on current fastest GDDR5X chips.

The Samsung GDDR6 production will play a critical role in early launches of next-generation graphics cards and devices. Due to the improvement in density, performance and energy efficiency, the 16Gb GDDR6 will be widely used in any devices. With GDDR6 chips and recently introduced 8GB HBM2 chips, Samsung expects to accelerate growth of the premium memory market over the next several years.



Source: Samsung