Samsung has unveiled first details about the 3rd generation High Bandwidth Memory (HMB3) and GDDR6 memory at Hot Chips 28 event, both bringing increased bandwidth, higher capacity and lower power consumption.


According to Samsung's presentation at Hot Chips 28 event, GDDR6 memory should be coming in 2018, and offer bandwidth of up to 15Gbps, a significant improvement compared to current 10Gbps bandwidth on the GDDR5X. The GDDR5X memory can peak at 12Gbps bandwidth but eventually, GDDR6 will replace it, but it appears that it won't happen before 2018.

While we already heard a lot of information regarding 2nd generation High Bandwidth Memory (HBM2), which should be coming with the next-gen high-end GPUs, Samsung has now revealed a bit more details regarding the next-generation.




Coming in 2019/2020, the HBM3 is expected to both double the bandwidth and capacity per chip, while maintaining the same power envelope as the HBM2. While expensive, High Bandwidth Memory is interesting for HPC and server markets, where amount of memory as well as the performance are quite important.

Hopefully, we will see HBM2 on some consumer products early next year so we will have a clear picture on what to expect from future generation.



Source: Videocardz.com.