If you have built a PC lately, you will probably know that if you want fast memory modules you have to use Samsung based RAM. According the latest rumors, the company's memory might get even faster pretty soon. Samsung has just announced that it's moving into second generation of 10nm DDR4 DRAM memory.

The upcoming chips step performance up to 3600 MT/s and reduce power usage by about 15 percent. How is this possible? The company says that they have been improved the layout of each memory, by using a "air spacer" scheme. A few years ago, Intel used a similar scheme for its high-performance processors. Besides the performance and efficiency improvements, Samsung also says that the new second-generation DDR4 is its densest ever.

However Samsung will continue production of its first-generation parts alongside the new one. We are a bit surprised of this move, due the seemingly insatiable demand for DRAM right now. Furthermore according to the company, these advancements will allow to accelerate production of DDR5, HBM3, LPDDR5 and GDDR5 memories for next-generation products. At the moment there aren't more informations but the validation process might require some time.



Source: Samsung